PROCESS, REACTOR AND SYSTEM FOR FABRICATION OF FREESTANDING TWO-DIMENSIONAL NANOSTRUCTURES USING PLASMA TECHNOLOGY
The present invention relates to a process, reactor and system to produce self-standing two-dimensional nanostructures, using a microwave-excited plasma environment. The process is based on injecting, into a reactor, a mixture (9) of gases and precursors in stream regime. The stream is subjected to...
Gespeichert in:
Hauptverfasser: | , , , |
---|---|
Format: | Patent |
Sprache: | eng ; fre ; ger |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The present invention relates to a process, reactor and system to produce self-standing two-dimensional nanostructures, using a microwave-excited plasma environment. The process is based on injecting, into a reactor, a mixture (9) of gases and precursors in stream regime. The stream is subjected to a surface wave (5) electric field, excited by the use of microwave power (7) which is introduced into a field applicator (6), generating high energy density plasmas (2,3,4), that break the precursors into its atomic and/or molecular constituents. The system comprises a plasma reactor with a surface wave launching zone, a transient zone with a progressively increasing cross-sectional area, and a nucleation zone. The plasma reactor together with an infrared radiation source (11) provides a controlled adjustment of the spatial gradients, of the temperature and the gas stream velocity. The majority of the obtained two-dimensional nanostructures samples have a thickness of a single atomic layer, in addition the process and system allow to obtain graphene production rates of the order of one gram per hour and higher. |
---|