METHODS FOR FORMING MICROSTRIP TRANSMISSION LINES ON THIN SILICON CARBIDE ON INSULATOR (SICOI) WAFERS

A method for providing a semiconductor structure includes: providing a structure having: layer comprising silicon, such as a layer of silicon or silicon carbide; a bonding structure; and silicon layer, the bonding structure being disposed between the layer comprising silicon and the silicon layer, t...

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Bibliographische Detailangaben
Hauptverfasser: IP, Kelly P, LAROCHE, Jeffrey R, KAZIOR, Thomas E
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:A method for providing a semiconductor structure includes: providing a structure having: layer comprising silicon, such as a layer of silicon or silicon carbide; a bonding structure; and silicon layer, the bonding structure being disposed between the layer comprising silicon and the silicon layer, the silicon layer being thicker than the layer comprising silicon; and, a Group III-V layer disposed on an upper surface of the layer comprising silicon; forming a Group III-V device in the III-V layer and a strip conductor connected to the device; removing silicon layer and the bonding structure to expose a bottom surface of layer comprising silicon; and forming a ground plane conductor on the exposed bottom surface of the layer comprising silicon to provide, with the strip conductor and the ground plane conductor, a microstrip transmission line.