MANAGING THRESHOLD VOLTAGE SHIFT IN NONVOLATILE MEMORY

Apparatus, systems, and methods to correct for threshold voltage drift in non-volatile memory devices are disclosed and described. In one example, a compensated demarcation voltage is generated by either a time-based drift compensation scheme or a disturb-based drift compensation scheme, and read an...

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Bibliographische Detailangaben
Hauptverfasser: SUNDARAM, Rajesh, QAWAMI, Shekoufeh, RIVERS, Doyle, DAMLE, Prashant S, WALKER, Julie M
Format: Patent
Sprache:eng ; fre ; ger
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Beschreibung
Zusammenfassung:Apparatus, systems, and methods to correct for threshold voltage drift in non-volatile memory devices are disclosed and described. In one example, a compensated demarcation voltage is generated by either a time-based drift compensation scheme or a disturb-based drift compensation scheme, and read and write operations to the non-volatile memory are carried out using the compensated voltage threshold.