CRYSTAL GROWTH APPARATUS AND RELATED METHODS

Crystal pulling apparatus for continuous pulling of silicon ingots in which an oxygen-containing crucible may be eliminated are disclosed. A solid silicon support having three indentations is used to hold pools of molten silicon. Silicon is added to a melting pool and weirs over into a stabilization...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser:	LUTER, William Lynn
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	Crystal pulling apparatus for continuous pulling of silicon ingots in which an oxygen-containing crucible may be eliminated are disclosed. A solid silicon support having three indentations is used to hold pools of molten silicon. Silicon is added to a melting pool and weirs over into a stabilization pool and further weirs over into a growth pool from which a silicon ingot is grown.