INDIRECT BAND GAP LIGHT EMITTING DEVICE

An indirect band gap light emitting device comprises a first body of non-monocrystalline indirect band gap semiconductor material. In this first body, two regions are formed: a first region with a first doping kind and a first doping concentration and a second region with a second doping kind and a...

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Bibliographische Detailangaben
Hauptverfasser:	VENTER, Petrus, Johannes, GOOSEN, Marius, Eugene, JANSE VAN RENSBURG, Christo, FAURÉ, Nicolaas, Mattheus
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	An indirect band gap light emitting device comprises a first body of non-monocrystalline indirect band gap semiconductor material. In this first body, two regions are formed: a first region with a first doping kind and a first doping concentration and a second region with a second doping kind and a second doping concentration. A junction is formed between the first region and the second region with a terminal arrangement connected to the first body and arranged to reverse bias the junction so as to emit light. The first body is formed from a deposited layer of semiconductor to form an integral part of a substrate. An integrated circuit can include the light emitting device and a second body of monocrystalline indirect band gap semiconductor material. A third body may separate and galvanically isolate the first and second bodies from each other.