PLASMA DEPOSITION METHOD

A plasma deposition method in which a cover layer is deposited onto the internal walls of an empty plasma chamber by plasma deposition of a precursor mixture comprising (i) one or more hydrocarbon compounds of formula (A), or (ii) one or more C1-C3 alkane, C2-C3 alkene or C2-C3 alkyne compounds: (Fo...

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Bibliographische Detailangaben
Hauptverfasser:	LIONE, Richard Anthony, SINGH, Shailendra Vikram
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A plasma deposition method in which a cover layer is deposited onto the internal walls of an empty plasma chamber by plasma deposition of a precursor mixture comprising (i) one or more hydrocarbon compounds of formula (A), or (ii) one or more C1-C3 alkane, C2-C3 alkene or C2-C3 alkyne compounds: (Formula (A)) wherein: Z1 represents C1-C3 alkyl or C2-C3 alkenyl; Z2 represents hydrogen, C1-C3 alkyl or C2-C3 alkenyl; Z3 represents hydrogen, C1-C3 alkyl or C2-C3 alkenyl; Z4 represents hydrogen, C1-C3 alkyl or C2-C3 alkenyl; Z5 represents hydrogen, C1-C3 alkyl or C2-C3 alkenyl; and Z6 represents hydrogen, C1-C3 alkyl or C2-C3 alkenyl.