SEMICONDUCTOR PHOTODETECTOR DEVICE WITH PROTECTION AGAINST AMBIENT BACK LIGHT

SEMICONDUCTOR PHOTODETECTOR DEVICE WITH PROTECTION AGAINST AMBIENT BACK LIGHT

The semiconductor photodetector device comprises a substrate (1) of semiconductor material of a first type of electric conductivity, an epitaxial layer (2) of an opposite second type of electric conductivity, a further epitaxial layer (3) of the first type of electric conductivity and photodetectors...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Park, Jong Mun, Dierschke, Eugene G, Sidorov, Victor
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The semiconductor photodetector device comprises a substrate (1) of semiconductor material of a first type of electric conductivity, an epitaxial layer (2) of an opposite second type of electric conductivity, a further epitaxial layer (3) of the first type of electric conductivity and photodetectors (4). The epitaxial layer functions as a shielding layer for charge carriers (e - , h + ) generated by radiation that is incident from a rear side opposite the photodetectors.