EXHAUST-FACILITY SYSTEM

An exhaust system facility that reduces the residual amount of byproducts inside the exhaust system facility to further enhance the operation rate of the exhaust system facility is provided. A vacuum pump 10 is installed downstream of a chamber 14 of a semiconductor manufacturing apparatus 12 to exh...

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Bibliographische Detailangaben
Hauptverfasser:	MAISHIGI, Keiji, SUGIURA, Tetsuro, HARADA, Minoru, HSIANG HUANG, Lu
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS BLASTING CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY HEATING INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIGHTING MECHANICAL ENGINEERING METALLURGY PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL POSITIVE DISPLACEMENT MACHINES FOR LIQUIDS PUMPS FOR LIQUIDS OR ELASTIC FLUIDS ROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENTMACHINES FOR LIQUIDS ROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENTPUMPS SEPARATION SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING WEAPONS
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Beschreibung
Zusammenfassung:	An exhaust system facility that reduces the residual amount of byproducts inside the exhaust system facility to further enhance the operation rate of the exhaust system facility is provided. A vacuum pump 10 is installed downstream of a chamber 14 of a semiconductor manufacturing apparatus 12 to exhaust the inside of the chamber 14. A gas supply device 18 is connected to the vacuum pump 10 to supply a gas containing hydrogen halide and nitrogen to the vacuum pump 10.