CONDUCTIVE CONNECTORS HAVING A RUTHENIUM/ALUMINUM-CONTAINING LINER AND METHODS OF FABRICATING THE SAME
A conductive connector for a microelectronic structure may be formed in an opening in a dielectric layer, wherein a ruthenium/aluminum-containing liner is disposed between the dielectric layer and a substantially aluminum-free copper fill material within the opening. The ruthenium/aluminum-containin...
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Sprache: | eng ; fre ; ger |
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Zusammenfassung: | A conductive connector for a microelectronic structure may be formed in an opening in a dielectric layer, wherein a ruthenium/aluminum-containing liner is disposed between the dielectric layer and a substantially aluminum-free copper fill material within the opening. The ruthenium/aluminum-containing liner may be formed by depositing a ruthenium-containing liner and migrating aluminum into the ruthenium-containing liner with an annealing process. The aluminum may be presented as a layer formed either before or after the deposition of a copper fill material, or may be presented within a copper/aluminum alloy fill material wherein the annealing process migrates the aluminum out of the copper/aluminum alloy and into the ruthenium-containing liner. |
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