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This invention relates to generation and control of electron emission and transport in a plasma device for enhancing ionization in sputtering, including magnetron sputtering, ion treatment, thermal evaporation, electron beam evaporation. The device in combines a sputtering enhanced electron emission...

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Bibliographische Detailangaben
1. Verfasser: BELLIDO-GONZALEZ, Victor
Format: Patent
Sprache:eng ; fre ; ger
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Beschreibung
Zusammenfassung:This invention relates to generation and control of electron emission and transport in a plasma device for enhancing ionization in sputtering, including magnetron sputtering, ion treatment, thermal evaporation, electron beam evaporation. The device in combines a sputtering enhanced electron emission on a cathodic element in which a strong electrical field around the electron emission element is created. In addition, this electric field area is in a magnetically confined space of nearly null strength and/or magnetic mirror features. The electron emission area would also comprise of guided magnetic field extraction magnetic field paths which could be either permanent or created at pulse modes. Also, the invention relates to reactive process and coating deposition ion bombardment management. This invention also relates to the use in feedback control systems; manufacturing process and methods which use these devices and materials and components processed by the present invention are also part of the invention.