PROCESS FOR PRODUCING A THIN LAYER OF POROUS DLC, USE OF A PECVD PLANT AND WORKPIECE COATED WITH POROUS DLC

The invention relates to a process for producing a thin layer (22) of porous DLC, to the use of a PECVD plant (2) and to a workpiece (16) having a surface (20) coated with a porous DLC layer (22). In a process for producing a thin DLC layer (22), a carbon-containing precursor gas is introduced into...

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Bibliographische Detailangaben
Hauptverfasser:	WIENECKE, Marion, HEEG, Jan, SCHÜTZ, Antje
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS, ORSURGICAL ARTICLES CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL DISINFECTION, STERILISATION, OR DEODORISATION OF AIR HUMAN NECESSITIES HYGIENE INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS, OR SURGICALARTICLES MEDICAL OR VETERINARY SCIENCE METALLURGY METHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS INGENERAL SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The invention relates to a process for producing a thin layer (22) of porous DLC, to the use of a PECVD plant (2) and to a workpiece (16) having a surface (20) coated with a porous DLC layer (22). In a process for producing a thin DLC layer (22), a carbon-containing precursor gas is introduced into a recipient (4) for depositing a DLC layer on the surface (20) to be coated of a workpiece (16), wherein the DLC layer (22) is deposited at a working pressure of between 20 * 10-3 and 30 * 10-3 mbar and a BIAS voltage of between -250 V and -150 V. Subsequently, a gas for etching back is introduced into the recipient (4) and DLC existing on the surface (20) of the workpiece (16) is etched back at a working pressure of between 200 * 10-3 and 300 * 10-3 mbar and a BIAS voltage of between -430 V and -330 V. This process is repeated multiple times.