MEMORY DEVICE AND DATA-PROCESSING METHOD BASED ON MULTI-LAYER RRAM CROSSBAR ARRAY

MEMORY DEVICE AND DATA-PROCESSING METHOD BASED ON MULTI-LAYER RRAM CROSSBAR ARRAY

Embodiments of the present invention provide a memory device. The memory device includes an RRAM crossbar array that is configured to perform a logic operation, and resistance values of resistors in the RRAM crossbar array are all set to R on or R off to indicate a Boolean value 1 or 0. Based on the...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: XIAO, Shihai, ZHAO, Junfeng, WANG, Yuhao, NI, Leibin, YANG, Wei, YU, Hao
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
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PHYSICS
STATIC STORES
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Beschreibung
Zusammenfassung:Embodiments of the present invention provide a memory device. The memory device includes an RRAM crossbar array that is configured to perform a logic operation, and resistance values of resistors in the RRAM crossbar array are all set to R on or R off to indicate a Boolean value 1 or 0. Based on the foregoing setting, a Boolean operation is implemented by using the RRAM crossbar array, so that reliability of a logic operation of the RRAM crossbar array can be improved.