MONOCRYSTALLINE SEMICONDUCTOR WAFER AND METHOD FOR PRODUCING A SEMICONDUCTOR WAFER

A monocrystalline semiconductor wafers have an average roughness Ra of at most 0.8 nm at a limiting wavelength of 250 μm, and an ESFQRavg of 8 nm or less given an edge exclusion of 1 mm. The wafers are advantageously produced by a method comprising the following steps in the indicated order:a) simultaneous double-side polishing of the semiconductor wafer,b) local material-removing processing of at least one part of at least one side of the semiconductor wafer using a fluid jet which contains suspended hard substance particles and which is directed onto a small region of the surface with the aid of a nozzle, wherein the nozzle is moved over that part of the surface which is to be treated in such a way that a predefined geometry parameter of the semiconductor wafer is improved, andc) polishing of the at least one surface of the semiconductor wafer.