A POST CHEMICAL-MECHANICAL-POLISHING (POST-CMP) CLEANING COMPOSITION COMPRISING A SPECIFIC SULFUR-CONTAINING COMPOUND

A post chemical-mechanical-polishing (post-CMP) cleaning composition comprising: (A) is cysteine, glutathione, N-acetylcysteine, thiourea, (L) at least one oligomeric or polymeric polycarboxylic acid, and (C) water, wherein the post-CMP cleaning composition has a pH-value in the range of from 4 to n...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Li, Yuzhuo, Zhong, Mingije, Venkataraman, Shyam Sundar
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES BASIC ELECTRIC ELEMENTS CANDLES CHEMISTRY DETERGENT COMPOSITIONS DETERGENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FATTY ACIDS THEREFROM METALLURGY RECOVERY OF GLYCEROL RESIN SOAPS SEMICONDUCTOR DEVICES SOAP OR SOAP-MAKING USE OF SINGLE SUBSTANCES AS DETERGENTS
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A post chemical-mechanical-polishing (post-CMP) cleaning composition comprising: (A) is cysteine, glutathione, N-acetylcysteine, thiourea, (L) at least one oligomeric or polymeric polycarboxylic acid, and (C) water, wherein the post-CMP cleaning composition has a pH-value in the range of from 4 to not more than 7. The use of the composition for removing residues and contaminants from the surface of semiconductor substrates useful for manufacturing microelectronic devices. A process for manufacturing microelectronic devices from semiconductor substrates comprising the step of removing residues and contaminants from the surface of the semiconductor substrates by contacting them at least once with the post-CMP cleaning composition.