EMBEDDED METALLIC STRUCTURES IN GLASS

A device having embedded metallic structures in a glass is provided. The device includes a first wafer, at least one conductive trace, a planarized insulation layer and a second wafer. The first wafer has at least one first wafer via that is filled with conductive material. The at least one conducti...

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Bibliographische Detailangaben
Hauptverfasser:	SANDLIN, Michael S, DAY, John K, RUBEN, David A
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	A device having embedded metallic structures in a glass is provided. The device includes a first wafer, at least one conductive trace, a planarized insulation layer and a second wafer. The first wafer has at least one first wafer via that is filled with conductive material. The at least one conductive trace is formed on the first wafer. The at least one conductive trace is in contact with the at least one first wafer via that is filled with the conductive material. The planarized insulation layer is formed over the first wafer and at least one conductive trace. The planarized insulation layer further has at least one insulation layer via that provides a path to a portion of the at least one conductive trace. The second wafer is bonded to the planarized insulation layer.