TRANSISTOR WITH STRUCTURED SOURCE AND DRAIN REGIONS AND METHOD FOR PRODUCING SAME

a second layer overlapping the first layer, the second layer comprising a first main face and a second main face parallel to one another and two lateral faces, the first main face being in contact with the first layer, the lateral faces forming an angle α in the range 50° to 59°, and preferably a 53...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	GRENOUILLET, Laurent, MAZZOCCHI, Vincent
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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