TRANSISTOR WITH STRUCTURED SOURCE AND DRAIN REGIONS AND METHOD FOR PRODUCING SAME

TRANSISTOR WITH STRUCTURED SOURCE AND DRAIN REGIONS AND METHOD FOR PRODUCING SAME

a second layer overlapping the first layer, the second layer comprising a first main face and a second main face parallel to one another and two lateral faces, the first main face being in contact with the first layer, the lateral faces forming an angle α in the range 50° to 59°, and preferably a 53...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: GRENOUILLET, Laurent, MAZZOCCHI, Vincent
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:a second layer overlapping the first layer, the second layer comprising a first main face and a second main face parallel to one another and two lateral faces, the first main face being in contact with the first layer, the lateral faces forming an angle α in the range 50° to 59°, and preferably a 53° angle, with the first main face.