SPUTTER TARGET BACKING PLATE ASSEMBLIES WITH COOLING STRUCTURES
A method of forming a monolithic backing plate comprising using additive manufacturing to form a three dimensional structure of continuous material including forming a substantially planar first side in a first plane, forming a plurality of flow barriers joined to the first side, the plurality of fl...
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creator | STROTHERS, Susan D FERRASSE, Stephane |
description | A method of forming a monolithic backing plate comprising using additive manufacturing to form a three dimensional structure of continuous material including forming a substantially planar first side in a first plane, forming a plurality of flow barriers joined to the first side, the plurality of flow barriers having a thickness in a direction perpendicular to the first plane; forming a plurality of flow channels defined between the plurality of flow barriers; and forming a substantially planar second side in the first plane, and uniformly solidifying the material such that the backing plate comprises a uniform, continuous material structure throughout the first side, the plurality of flow barriers, and the second side. |
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forming a plurality of flow channels defined between the plurality of flow barriers; and forming a substantially planar second side in the first plane, and uniformly solidifying the material such that the backing plate comprises a uniform, continuous material structure throughout the first side, the plurality of flow barriers, and the second side.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180919&DB=EPODOC&CC=EP&NR=3375007A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180919&DB=EPODOC&CC=EP&NR=3375007A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>STROTHERS, Susan D</creatorcontrib><creatorcontrib>FERRASSE, Stephane</creatorcontrib><title>SPUTTER TARGET BACKING PLATE ASSEMBLIES WITH COOLING STRUCTURES</title><description>A method of forming a monolithic backing plate comprising using additive manufacturing to form a three dimensional structure of continuous material including forming a substantially planar first side in a first plane, forming a plurality of flow barriers joined to the first side, the plurality of flow barriers having a thickness in a direction perpendicular to the first plane; forming a plurality of flow channels defined between the plurality of flow barriers; and forming a substantially planar second side in the first plane, and uniformly solidifying the material such that the backing plate comprises a uniform, continuous material structure throughout the first side, the plurality of flow barriers, and the second side.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAPDggNCXENUghxDHJ3DVFwcnT29vRzVwjwcQxxVXAMDnb1dfLxdA1WCPcM8VBw9vf3AckGhwSFOoeEBrkG8zCwpiXmFKfyQmluBgU31xBnD93Ugvz41OKCxOTUvNSSeNcAY2NzUwMDc0dDYyKUAABXQCpW</recordid><startdate>20180919</startdate><enddate>20180919</enddate><creator>STROTHERS, Susan D</creator><creator>FERRASSE, Stephane</creator><scope>EVB</scope></search><sort><creationdate>20180919</creationdate><title>SPUTTER TARGET BACKING PLATE ASSEMBLIES WITH COOLING STRUCTURES</title><author>STROTHERS, Susan D ; FERRASSE, Stephane</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3375007A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>STROTHERS, Susan D</creatorcontrib><creatorcontrib>FERRASSE, Stephane</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>STROTHERS, Susan D</au><au>FERRASSE, Stephane</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SPUTTER TARGET BACKING PLATE ASSEMBLIES WITH COOLING STRUCTURES</title><date>2018-09-19</date><risdate>2018</risdate><abstract>A method of forming a monolithic backing plate comprising using additive manufacturing to form a three dimensional structure of continuous material including forming a substantially planar first side in a first plane, forming a plurality of flow barriers joined to the first side, the plurality of flow barriers having a thickness in a direction perpendicular to the first plane; forming a plurality of flow channels defined between the plurality of flow barriers; and forming a substantially planar second side in the first plane, and uniformly solidifying the material such that the backing plate comprises a uniform, continuous material structure throughout the first side, the plurality of flow barriers, and the second side.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | SPUTTER TARGET BACKING PLATE ASSEMBLIES WITH COOLING STRUCTURES |
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