SPUTTER TARGET BACKING PLATE ASSEMBLIES WITH COOLING STRUCTURES

SPUTTER TARGET BACKING PLATE ASSEMBLIES WITH COOLING STRUCTURES

A method of forming a monolithic backing plate comprising using additive manufacturing to form a three dimensional structure of continuous material including forming a substantially planar first side in a first plane, forming a plurality of flow barriers joined to the first side, the plurality of fl...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: STROTHERS, Susan D, FERRASSE, Stephane
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:A method of forming a monolithic backing plate comprising using additive manufacturing to form a three dimensional structure of continuous material including forming a substantially planar first side in a first plane, forming a plurality of flow barriers joined to the first side, the plurality of flow barriers having a thickness in a direction perpendicular to the first plane; forming a plurality of flow channels defined between the plurality of flow barriers; and forming a substantially planar second side in the first plane, and uniformly solidifying the material such that the backing plate comprises a uniform, continuous material structure throughout the first side, the plurality of flow barriers, and the second side.