METHOD AND APPARATUS FOR A THIN FILM DIELECTRIC STACK

A system that incorporates teachings of the subject disclosure may include, for example, a thin film capacitor a silicon substrate having a silicon dioxide layer; an adhesion layer on the silicon dioxide layer, wherein the adhesion layer is a polar dielectric; a first electrode layer on the adhesion...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ZELNER, Marina, CERVIN, Andrew Vladimir Claude, HORNE, Edward
Format: Patent
Sprache:eng ; fre ; ger
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Beschreibung
Zusammenfassung:A system that incorporates teachings of the subject disclosure may include, for example, a thin film capacitor a silicon substrate having a silicon dioxide layer; an adhesion layer on the silicon dioxide layer, wherein the adhesion layer is a polar dielectric; a first electrode layer on the adhesion layer; a dielectric layer on the first electrode layer; and a second electrode layer on the dielectric layer. Other embodiments are disclosed.