LICOO2-CONTAINING SINTERED COMPACT, LICOO2-CONTAINING SPUTTERING TARGET, AND LICOO2-CONTAINING SINTERED COMPACT MANUFACTURING METHOD

To realize a sintered compact containing LiCoO 2 which can increase a film deposition rate during sputtering, particularly even when a film is deposited only by pulsed DC discharge sputtering and can suppress the generation of flakes due to sputtering, and which is hardly cracked and is easy to hand...

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Bibliographische Detailangaben
Hauptverfasser:	TAKETOMI, Yuichi, KANAMARU, Moriyoshi, YOSHIDA, Shintaro
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OFSOLID INORGANIC COMPOUNDS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY LIME, MAGNESIA METALLURGY PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSIONOF CHEMICAL INTO ELECTRICAL ENERGY REFRACTORIES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	To realize a sintered compact containing LiCoO 2 which can increase a film deposition rate during sputtering, particularly even when a film is deposited only by pulsed DC discharge sputtering and can suppress the generation of flakes due to sputtering, and which is hardly cracked and is easy to handle. In the sintered compact containing LiCoO 2 , an average grain size is 10 to 40 µm, a relative density is 90% or more, and a resistivity is 100 ©·cm or less.