CIRCUIT SUBSTRATE AND SEMICONDUCTOR DEVICE

To improve a TCT characteristic of a circuit substrate. The circuit substrate comprises a ceramic substrate including a first and second surfaces, and first and second metal plates respectively bonded to the first and second surfaces via first and second bonding layers. A three-point bending strength of the ceramic substrate is 500 MPa or more. At least one of L1/H1 of a first protruding portion of the first bonding layer and L2/H2 of a second protruding portion of the second bonding layer is 0.5 or more and 3.0 or less. At least one of an average value of first Vickers hardnesses of 10 places of the first protruding portion and an average value of second Vickers hardnesses of 10 places of the second protruding portion is 250 or less. At least one selected from the group consisting of a difference between a maximum value and a minimum value of the first Vickers hardnesses and a difference between a maximum value and a minimum value of the second Vickers hardnesses is 50 or less. At least one selected from the group consisting of the first and second bonding layers contains Ag, Cu and Ti. A side surface of the first metal plate and an inner surface thereof define an angle of 40 degrees or more and 84 degrees or less therebetween.