BACKSIDE COUPLED SYMMETRIC VARACTOR STRUCTURE

A symmetric varactor structure may include a first varactor component. The first varactor component may include a gate operating as a second plate, a gate oxide layer operating as a dielectric layer and a body operating as a first plate of an area modulating capacitor. In addition, doped regions may...

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Bibliographische Detailangaben
Hauptverfasser: KIM, Daeik Daniel, YUN, Changhan Hobie, BERDY, David Francis, LAN, Je-Hsiung Jeffrey, KIM, Jonghae
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:A symmetric varactor structure may include a first varactor component. The first varactor component may include a gate operating as a second plate, a gate oxide layer operating as a dielectric layer and a body operating as a first plate of an area modulating capacitor. In addition, doped regions may surround the body of the first varactor component. The first varactor component may be supported on a backside by an isolation layer. The symmetric varactor structure may also include a second varactor component electrically coupled to the backside of the first varactor component through a backside conductive layer.