HIGH PURITY COPPER SPUTTERING TARGET MATERIAL

A high purity copper sputtering target material includes Cu at a purity of 99.99998 mass% or more excluding O, H, N and C, wherein an Al content is 0.005 mass ppm or less, a Si content is 0.05 mass ppm or less, an Fe content is 0.02 mass ppm or less, a S content is 0.03 mass ppm or less, Cl content...

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Hauptverfasser: TANI U, ARAI Isao, MORI Satoru, SATO Yuuji, KIKUCHI Fumitake
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:A high purity copper sputtering target material includes Cu at a purity of 99.99998 mass% or more excluding O, H, N and C, wherein an Al content is 0.005 mass ppm or less, a Si content is 0.05 mass ppm or less, an Fe content is 0.02 mass ppm or less, a S content is 0.03 mass ppm or less, Cl content is 0.1 mass ppm or less, n O content is 1 mass ppm or less, H content is 1 mass ppm or less, a N content is 1 mass ppm or less, and a C content is 1 mass ppm or less.