STAINLESS STEEL FOIL

STAINLESS STEEL FOIL

The present invention provide a ferritic stainless steel foil having a high thickness precision even with a thickness 60 µm or less ultrathin stainless steel foil and simultaneously having a plastic deformation ability and good elongation at break, that is, having a good press-formability (deep draw...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SAWAKI, Naoya, FUJIMOTO, Naoki, INAGUMA, Toru, FUKUDA, Masahiro, UNO, Tomohiro, UNNO, Hiroto
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
ALLOYS
BASIC ELECTRIC ELEMENTS
CHEMISTRY
ELECTRICITY
FERROUS OR NON-FERROUS ALLOYS
GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUSMETALS OR ALLOYS
LAYERED PRODUCTS
LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
MAKING METAL MALLEABLE BY DECARBURISATION, TEMPERING OR OTHERTREATMENTS
METALLURGY
METALLURGY OF IRON
MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS
PERFORMING OPERATIONS
PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSIONOF CHEMICAL INTO ELECTRICAL ENERGY
TRANSPORTING
TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Beschreibung
Zusammenfassung:The present invention provide a ferritic stainless steel foil having a high thickness precision even with a thickness 60 µm or less ultrathin stainless steel foil and simultaneously having a plastic deformation ability and good elongation at break, that is, having a good press-formability (deep drawing ability). The present invention is a stainless steel foil having a thickness of 5 µm to 60 µm, wherein a recrystallization ratio of said stainless steel foil is 90% to 100%, a surface layer of said stainless steel foil has a nitrogen concentration of 1.0 mass% or less, three or more crystal grains are contained in the thickness direction of said stainless steel foil, an average crystal grain diameter "d" of said crystal grains is 1 µm to 10 µm, and, when said thickness is "t" (µm), an area ratio of crystal grains having a crystal grain diameter of t/3 (µm) or more is 20% or less.