METHOD FOR MANUFACTURING A III-N SEMICONDUCTOR DEVICE WITH A THROUGH-SUBSTRATE VIA

METHOD FOR MANUFACTURING A III-N SEMICONDUCTOR DEVICE WITH A THROUGH-SUBSTRATE VIA

A Group III nitride semiconductor device comprising a back-side connected source electrode (79, 87) comprising a Through-Substrate Via (TSV) (91, 92). In an embodiment, the method includes forming an opening in the front surface of the substrate, inserting conductive material (91, 92) into the openi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: BIRNER, Albert, BRECH, Helmut
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A Group III nitride semiconductor device comprising a back-side connected source electrode (79, 87) comprising a Through-Substrate Via (TSV) (91, 92). In an embodiment, the method includes forming an opening in the front surface of the substrate, inserting conductive material (91, 92) into the opening, and coupling the source electrode (79) of the Group III nitride-based transistor on the top surface to the electode (87) on the rear surface of the substrate with the conductive material. The conductive material may comprise a conductive line (92) and a conductive plug (91).