COMPOSITIONS AND PROCESSES FOR DEPOSITING CARBON-DOPED SILICONCONTAINING FILMS

Described herein are compositions for depositing a carbon-doped silicon containing film wherein the composition comprises a first precursor comprising at least one compound selected from the group consisting of: an organoaminoalkylsilane having a formula of R 5 Si(NR 3 R 4 ) x H 3-x wherein x=1, 2,...

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Bibliographische Detailangaben
Hauptverfasser:	HAN, Bing, LEI, Xinjian, O'NEILL, Mark Leonard, KARWACKI, JR., Eugene Joseph, CHANDRA, Haripin, XIAO, Manchao, PEARLSTEIN, Ronald Martin
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM ADHESIVES CHEMICAL PAINT OR INK REMOVERS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CORRECTING FLUIDS DIFFUSION TREATMENT OF METALLIC MATERIAL DYES FILLING PASTES INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INKS METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS ORGANIC CHEMISTRY PAINTS PASTES OR SOLIDS FOR COLOURING OR PRINTING POLISHES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION USE OF MATERIALS THEREFOR WOODSTAINS
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Beschreibung
Zusammenfassung:	Described herein are compositions for depositing a carbon-doped silicon containing film wherein the composition comprises a first precursor comprising at least one compound selected from the group consisting of: an organoaminoalkylsilane having a formula of R 5 Si(NR 3 R 4 ) x H 3-x wherein x=1, 2, 3; an organoalkoxyalkylsilane having a formula of R 6 Si(OR 7 ) x H 3-x wherein x=1, 2, 3; an organoaminosilane having a formula of R 8 N(SiR 9 (NR 10 R 11 )H) 2 ; an organoaminosilane having a formula of R 8 N(SiR 9 LH) 2 and combinations thereof; and optionally a second precursor comprising a compound having the formula: Si(NR 1 R 2 )H 3 . Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).