NANOWIRES OR NANOPYRAMIDS GROWN ON GRAPHITIC SUBSTRATE

NANOWIRES OR NANOPYRAMIDS GROWN ON GRAPHITIC SUBSTRATE

A composition of matter comprising: a graphitic substrate optionally carried on a support, a seed layer having a thickness of no more than 50 nm deposited directly on top of said substrate, opposite any support; and an oxide or nitride masking layer e directly on top of said seed layer; wherein a pl...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HØIAAS, Ida Marie E, KIM, Dong Chul, FIMLAND, Bjørn Ove M, WEMAN, Helge, HEIMDAL, Carl Philip J
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A composition of matter comprising: a graphitic substrate optionally carried on a support, a seed layer having a thickness of no more than 50 nm deposited directly on top of said substrate, opposite any support; and an oxide or nitride masking layer e directly on top of said seed layer; wherein a plurality of holes are present through said seed layer and through said masking layer to C said graphitic substrate; and wherein a plurality of nanowires or nanopyramids are grown from said substrate in said holes, said nanowres or nanopyramids comprising at least one semiconducting group III-V compound.