SECONDARY BATTERY MANUFACTURING METHOD

The present invention provides a method for manufacturing a secondary cell having a charging layer that captures electrons as forming an energy level in a band gap by causing photoexcited structural change on an n-type metal oxide semiconductor covered with an insulating material, comprising a coati...

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Hauptverfasser: SAITO, Tomokazu, DEWA, Harutada
Format: Patent
Sprache:eng ; fre ; ger
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Beschreibung
Zusammenfassung:The present invention provides a method for manufacturing a secondary cell having a charging layer that captures electrons as forming an energy level in a band gap by causing photoexcited structural change on an n-type metal oxide semiconductor covered with an insulating material, comprising a coating step (S1) to coat coating liquid for forming a coating film that includes constituents to be a charging layer (18); a drying step (S2) to form a dried coating film by drying the coating liquid coated in the coating step (S1); a UV-irradiating step (S3) to form a UV-irradiated coating film by irradiating the dried coating film obtained through the drying step (S2) with ultraviolet; and a burning step (S5) to burn a plurality of the UV-irradiated coating films after forming the plurality of UV-irradiated coating films by repeating a set plural times, the set including the coating step (S1), the drying step (S2), and the irradiating step (S3).