INTEGRATING MEMS STRUCTURES WITH INTERCONNECTS AND VIAS

INTEGRATING MEMS STRUCTURES WITH INTERCONNECTS AND VIAS

A conductive layer is deposited into a trench in a sacrificial layer on a substrate. An etch stop layer is deposited over the conductive layer. The sacrificial layer is removed to form a gap. In one embodiment, a beam is over a substrate. An interconnect is on the beam. An etch stop layer is over th...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: BRISTOL, Robert L, SINGH, Kanwal Jit, PAWASHE, Chytra, YOUNG, Ian A, LIN, Kevin Lai, KIM, Raseong
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES
MICROSTRUCTURAL TECHNOLOGY
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
TRANSPORTING
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Beschreibung
Zusammenfassung:A conductive layer is deposited into a trench in a sacrificial layer on a substrate. An etch stop layer is deposited over the conductive layer. The sacrificial layer is removed to form a gap. In one embodiment, a beam is over a substrate. An interconnect is on the beam. An etch stop layer is over the beam. A gap is between the beam and the etch stop layer.