NANOSTRUCTURES OF CONCENTRIC LAYERS

The present invention relates to a nanostructure characterized in that it is composed of one or multiple concentric layers around a carbon or vacuum core, comprising said one or multiple concentric layers at least one of the following components in crystalline or polycrystalline form: intrinsic sili...

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Bibliographische Detailangaben
Hauptverfasser:	GADEA DÍEZ, Gerard, TARANCÓN RUBIO, Alberto, MORATA GARCÍA, Alejandro
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES METALLURGY NANOTECHNOLOGY PERFORMING OPERATIONS PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSIONOF CHEMICAL INTO ELECTRICAL ENERGY SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
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Beschreibung
Zusammenfassung:	The present invention relates to a nanostructure characterized in that it is composed of one or multiple concentric layers around a carbon or vacuum core, comprising said one or multiple concentric layers at least one of the following components in crystalline or polycrystalline form: intrinsic silicon, intrinsic germanium, p or n doped silicon, p or n doped germanium, intrinsic silicon-germanium alloys, p or n doped silicon-germanium alloys, silicon oxide, germanium oxide, silicon nitride, germanium nitride or a combination thereof. Also, the present invention relates to the manufacture and uses of said nanostructure.