A METHOD OF MANUFACTURING SILICON GERMANIUM-ON-INSULATOR

A multilayer structure comprising: a silicon-on-insulator substrate comprising (i) a single crystal semiconductor handle layer, (ii) a dielectric layer in interfacial contact with the front surface of the single crystal semiconductor handle layer, and (iii) a silicon layer in interfacial contact wit...

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Bibliographische Detailangaben

Hauptverfasser:	THOMAS, Shawn G, WANG, Gang
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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