A METHOD OF MANUFACTURING SILICON GERMANIUM-ON-INSULATOR

A METHOD OF MANUFACTURING SILICON GERMANIUM-ON-INSULATOR

A multilayer structure comprising: a silicon-on-insulator substrate comprising (i) a single crystal semiconductor handle layer, (ii) a dielectric layer in interfacial contact with the front surface of the single crystal semiconductor handle layer, and (iii) a silicon layer in interfacial contact wit...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: THOMAS, Shawn G, WANG, Gang
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A multilayer structure comprising: a silicon-on-insulator substrate comprising (i) a single crystal semiconductor handle layer, (ii) a dielectric layer in interfacial contact with the front surface of the single crystal semiconductor handle layer, and (iii) a silicon layer in interfacial contact with the dielectric layer, wherein the silicon layer comprises a hydride-terminated surface; a first silicon germanium layer in interfacial contact with the hydride-terminated surface of the silicon layer, wherein the first silicon germanium layer comprises silicon and germanium and has a formula of SixGe1-x, wherein x is between about 0.2 and about 0.8, molar ratio; and a second silicon germanium layer in interfacial contact with the first silicon germanium layer, wherein the second silicon germanium layer comprises silicon and germanium and has a formula SiyGe1-y, wherein y is between about 0.3 and about 0.9, molar ratio.