APPARATUS AND METHOD FOR FABRICATING A HIGH DENSITY MEMORY ARRAY

Described is an apparatus which comprises: non-orthogonal transistor fins which are non-orthogonal to transistor gates; diffusion contacts with non-right angled sides, the diffusion contacts coupled to the non-orthogonal transistor fins; first vias; and at least one memory element coupled to at leas...

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Bibliographische Detailangaben
Hauptverfasser: TAN, Elliot N, LEE, Kevin J, WANG, Yih
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:Described is an apparatus which comprises: non-orthogonal transistor fins which are non-orthogonal to transistor gates; diffusion contacts with non-right angled sides, the diffusion contacts coupled to the non-orthogonal transistor fins; first vias; and at least one memory element coupled to at least one of the diffusion contacts through at least one of the first vias.