SELECTIVE FIN CUT
The present invention relates to the use of directed self-assembly for selectively removing at least one fin (440) or fin (440) section from a pattern (420) of parallel fins (440, 450) in a semiconductor structure.
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Format: | Patent |
Sprache: | eng ; fre ; ger |
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Zusammenfassung: | The present invention relates to the use of directed self-assembly for selectively removing at least one fin (440) or fin (440) section from a pattern (420) of parallel fins (440, 450) in a semiconductor structure. |
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