SELECTIVE FIN CUT

The present invention relates to the use of directed self-assembly for selectively removing at least one fin (440) or fin (440) section from a pattern (420) of parallel fins (440, 450) in a semiconductor structure.

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Bibliographische Detailangaben
Hauptverfasser: MACHKAOUTSAN, Vladimir, GRONHEID, Roel
Format: Patent
Sprache:eng ; fre ; ger
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Beschreibung
Zusammenfassung:The present invention relates to the use of directed self-assembly for selectively removing at least one fin (440) or fin (440) section from a pattern (420) of parallel fins (440, 450) in a semiconductor structure.