RADIATION-HARD MOS PIXEL SENSOR

According to the invention, a MOS capacitor is used as a switchable capacitor, wherein the gate electrode is connected to the voltage that is to be read out. Semiconductor-side contacts of the MOS capacitor are used to apply a switching control signal that allows the effective capacitance of the MOS...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	MAES, Willem Hendrik
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	According to the invention, a MOS capacitor is used as a switchable capacitor, wherein the gate electrode is connected to the voltage that is to be read out. Semiconductor-side contacts of the MOS capacitor are used to apply a switching control signal that allows the effective capacitance of the MOS capacitor to be selected and being radiation-hard for damaging X-ray radiation.