NON-VOLATILE SRAM MEMORY CELL AND NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE

NON-VOLATILE SRAM MEMORY CELL AND NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE

A non-volatile SRAM memory cell and a non-volatile semiconductor memory device capable of programming SRAM data in a SRAM (15) to a non-volatile memory unit (16) through fast operation of the SRAM (15) are disclosed. A non-volatile semiconductor memory device (1) can achieve reduction in a voltage n...

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Bibliographische Detailangaben
Hauptverfasser: SHINAGAWA Yutaka, TANIGUCHI Yasuhiro, SAKURAI Ryotaro, KASAI Hideo, OKUYAMA Kosuke, KAWASHIMA Yasuhiko, TOYA Tatsuro
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Zusammenfassung:A non-volatile SRAM memory cell and a non-volatile semiconductor memory device capable of programming SRAM data in a SRAM (15) to a non-volatile memory unit (16) through fast operation of the SRAM (15) are disclosed. A non-volatile semiconductor memory device (1) can achieve reduction in a voltage necessary for a programming operation to program SRAM data to the non-volatile memory unit (16). Thus, a first access transistor (21 a), a second access transistor (21 b), a first load transistor (22a), a second load transistor (22b), a first drive transistor (23a), and a second drive transistor (23b) included in the SRAM (15) connected with the non-volatile memory unit (16) can each include a gate insulating film having a thickness less than or equal to 4 nm, which achieves fast operation of the SRAM (15) at a lower power supply voltage.