METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL

The present invention provides a method of manufacturing by the sublimation-recrystallization method more accurately detecting a thermal state of a starting material in a crucible and enabling control of the growth conditions while manufacturing an SiC single crystal. The method obtains the high frequency current to be supplied through the induction coil by a converter for converting AC current to DC current and an inverter means for converting the DC current output from the converter to a high frequency to obtain a high frequency current, obtains a grasp, in advance, of a relationship between a variation over time of a DC equivalent resistivity (DCV/DCI), calculated from a DC voltage value (DCV) and DC current value (DCI) converted by the converter at the time of growth of the silicon carbide single crystal, and a density of micropipes formed in the grown silicon carbide single crystal, and adjusts at least one of the DCV or DCI at the converter based on the relationship of the DC equivalent resistivity and micropipe density grasped in advance.