INTEGRATED PASSIVE DEVICE FOR RF POWER AMPLIFIER PACKAGE

The present invention relates to a radiofrequency (RF) power transistor package. It further relates to a mobile telecommunications base station comprising such a RF power transistor package, and to an integrated passive die suitable for an RF power amplifier package. According to the present inventi...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	De Boet, Johannes Adrianus Maria, Sveshtarov, Iordan Konstantinov, Van Rijs, Freerk
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AMPLIFIERS BASIC ELECTRONIC CIRCUITRY ELECTRICITY IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS RESONATORS
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Beschreibung
Zusammenfassung:	The present invention relates to a radiofrequency (RF) power transistor package. It further relates to a mobile telecommunications base station comprising such a RF power transistor package, and to an integrated passive die suitable for an RF power amplifier package. According to the present invention, an in-package impedance network is used that is connected to the output of the RF power transistor arranged inside the package. This network comprises a first inductive element having a first and second terminal, the first terminal being electrically connected to the output of the RF transistor, a resonance unit being electrically connected to second terminal of the first inductive element, and a second capacitive element electrically connected in between the resonance unit and ground. According to the present invention, the first capacitive element is arranged in series with the second capacitive element.