IGBT GATE DRIVE CIRCUIT AND METHOD

IGBT GATE DRIVE CIRCUIT AND METHOD

There are provided methods and systems for operating insulated gate bipolar transistors (IGBTs) (106,108). For example, there is provided a method that can include detecting a desaturation condition in an IGBT (106,108) and initiating a turn off procedure when desaturation is detected. The turn off...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TACKMAN, Terry Michael, WAGONER, Robert Gregory, SCHUETZ, Tobias, GREENLEAF, Todd David
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
PULSE TECHNIQUE
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Beschreibung
Zusammenfassung:There are provided methods and systems for operating insulated gate bipolar transistors (IGBTs) (106,108). For example, there is provided a method that can include detecting a desaturation condition in an IGBT (106,108) and initiating a turn off procedure when desaturation is detected. The turn off procedure can include holding a gate (120) of the IGBT at at least one voltage level intermediate between a positive rail voltage and a negative rail voltage of an operational range of the IGBT (106,108).