SEMICONDUCTOR LASER ELEMENT AND LASER LIGHT IRRADIATION DEVICE

A semiconductor laser device includes a semiconductor layer portion having an active layer and performs multi-mode emission of laser light. The semiconductor layer portion includes a first region, and a second region located closer to a facet on a laser light radiation side than the first region. Th...

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Bibliographische Detailangaben
Hauptverfasser:	OHKI, Yutaka, MINATO, Ryuichiro, UMENO, Kazuyuki
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRICITY OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS PHYSICS
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	A semiconductor laser device includes a semiconductor layer portion having an active layer and performs multi-mode emission of laser light. The semiconductor layer portion includes a first region, and a second region located closer to a facet on a laser light radiation side than the first region. The first region and the second region include a stripe region in which the laser light is guided, and an optical confinement effect of the laser light to the stripe region in a horizontal direction of the second region is less than that of the stripe region. Accordingly, a semiconductor laser device having a favorable coupling efficiency to an optical fiber is provided.