A METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND CORRESPONDING DEVICE

In one embodiment, a method of manufacturing semiconductor devices including metallizations (e.g. a Re-Distribution Layer - RDL metallizations 10) includes: - providing a capping stack (141, 161, 142, 162) onto the metallizations (10), wherein the stack includes at least one nickel layer, - includin...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Molgg, Michele, Scime', Fabio
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In one embodiment, a method of manufacturing semiconductor devices including metallizations (e.g. a Re-Distribution Layer - RDL metallizations 10) includes: - providing a capping stack (141, 161, 142, 162) onto the metallizations (10), wherein the stack includes at least one nickel layer, - including in the stack (141, 161, 142, 162) a pair of nickel layers (141, 142) having therebetween a layer of ductile material (161) such as palladium or gold.