DOPED GRAPHENE ELECTRODES FOR FERROELECTRIC CAPACITOR-BASED MEMORY DEVICE
A ferroelectric capacitor having a doped graphene bottom electrode and uses thereof are described. The doped graphene bottom electrode layer is deposited on a substrate with a ferroelectric layer deposited between the doped graphene layer and a top electrode.
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Patent |
Sprache: | eng ; fre ; ger |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | A ferroelectric capacitor having a doped graphene bottom electrode and uses thereof are described. The doped graphene bottom electrode layer is deposited on a substrate with a ferroelectric layer deposited between the doped graphene layer and a top electrode. |
---|