CONTINUOUS DIFFUSION CONFIGURABLE STANDARD CELL ARCHITECTURE

At least one configurable circuit cell with a continuous active region includes at least one center subcell, a first-side subcell, and a second-side subcell. Each center subcell includes first and second pMOS transistors and first and second nMOS transistors. The first pMOS transistor has a first-pM...

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Bibliographische Detailangaben
Hauptverfasser:	SAHU, Satyanarayana, BOWERS, Benjamin John, KWON, Ohsang, PUCKETT, Joshua Lance, GOODALL III, William James
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PULSE TECHNIQUE SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	At least one configurable circuit cell with a continuous active region includes at least one center subcell, a first-side subcell, and a second-side subcell. Each center subcell includes first and second pMOS transistors and first and second nMOS transistors. The first pMOS transistor has a first-pMOS-transistor gate, source, and drain. The first-pMOS-transistor source is coupled to a first voltage source. The second pMOS transistor has a second-pMOS-transistor gate, source, and drain. The second-pMOS-transistor source is coupled to the first voltage source. The first-pMOS-transistor drain and the second-pMOS-transistor drain are a same drain. The first nMOS transistor has a first-nMOS-transistor gate, source, and drain. The first-nMOS-transistor source is coupled to a second voltage source. The second nMOS transistor has a second-nMOS-transistor gate, source, and drain. The second-nMOS-transistor source is coupled to the second voltage source. The first-nMOS-transistor drain and the second-nMOS-transistor drain are a same drain.