SEMICONDUCTOR MICRO-HOLLOW CATHODE DISCHARGE DEVICE FOR PLASMA JET GENERATION

A micro-hollow cathode discharge device (100). The device (100) includes a first electrode layer (102) comprising a first electrode. A hole (110) is disposed in the first electrode layer (102). The device (100) also includes a dielectric layer (104) having a first surface that is disposed on the fir...

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Bibliographische Detailangaben
1. Verfasser:	NIKIC, Dejan
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS
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Beschreibung
Zusammenfassung:	A micro-hollow cathode discharge device (100). The device (100) includes a first electrode layer (102) comprising a first electrode. A hole (110) is disposed in the first electrode layer (102). The device (100) also includes a dielectric layer (104) having a first surface that is disposed on the first electrode layer (102). The hole (110) continues from the first electrode layer (102) through the dielectric layer (104). The device also includes a semi-conducting layer (106) disposed on a second surface of the dielectric layer (104) opposite the first surface. The semi-conducting layer (106) is a semiconductor material that spans across the hole (110) such that the hole (110) terminates at the semi-conducting layer (106). The device also includes a second electrode layer (108) disposed on the semi-conducting layer (106) opposite the dielectric layer (104).