MAGNETIC RANDOM ACCESS MEMORY (MRAM) AND METHOD OF OPERATION

MAGNETIC RANDOM ACCESS MEMORY (MRAM) AND METHOD OF OPERATION

A memory device includes a first memory cell having a first transistor, a second transistor, and a resistive storage element. During a read operation, sense current is conducted through the second transistor and the first transistor is used to sense feedback voltage at a first terminal of the resist...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Morton, Bruce, Roy, Anirban, Baker Jr, Frank Kelsey, Sadd, Michael A
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Beschreibung
Zusammenfassung:A memory device includes a first memory cell having a first transistor, a second transistor, and a resistive storage element. During a read operation, sense current is conducted through the second transistor and the first transistor is used to sense feedback voltage at a first terminal of the resistive storage element. During a write operation, current is conducted through the first and second transistors.