LED STRUCTURES FOR REDUCED NON-RADIATIVE SIDEWALL RECOMBINATION

LED STRUCTURES FOR REDUCED NON-RADIATIVE SIDEWALL RECOMBINATION

LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading la...

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Bibliographische Detailangaben
Hauptverfasser: DROLET, Jean-Jacques P, CHAKRABORTY, Arpan, HAEGER, Daniel Arthur, MCGRODDY, Kelly, BOUR, David P, PERKINS, James Michael
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.