PASSIVATION OF METALLIC IMPURITIES IN A SINGLE CRYSTALLINE REGION BY HYDROGENATION

PASSIVATION OF METALLIC IMPURITIES IN A SINGLE CRYSTALLINE REGION BY HYDROGENATION

Substrate comprising at least a single-crystalline silicon region having a thickness between two opposite faces, characterized in that said region has, in a vertical cross-section plan, a hydrogen rich zone which extends from at least a surface of one of the two opposite faces, in the vertical direc...

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Bibliographische Detailangaben
Hauptverfasser: DUBOIS, Sébastien, ENJALBERT, Nicolas, TURMAGAMBETOV, Tleuzhan, VEIRMAN, Jordi, GARANDET, Jean-Paul, MARTEL, Benoît
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Substrate comprising at least a single-crystalline silicon region having a thickness between two opposite faces, characterized in that said region has, in a vertical cross-section plan, a hydrogen rich zone which extends from at least a surface of one of the two opposite faces, in the vertical direction over at least 50 % of the thickness of said single crystalline region, and in which the average dislocation density is greater than or equal to 103 cm-2, and characterized in that a part of the surface of one of the two opposite faces of the said region facing to the hydrogen rich zone comprises strain high areas separated by a strain low area, the distance between two successive strain high areas being comprised between 5 μm and 50% of said thickness of said single crystalline silicon region.