POLYCRYSTALLINE SILICON AND METHOD FOR PRODUCING FZ SILICON SINGLE CRYSTAL BY USING THE SAME

POLYCRYSTALLINE SILICON AND METHOD FOR PRODUCING FZ SILICON SINGLE CRYSTAL BY USING THE SAME

When FZ single crystal silicon is produced from polycrystalline silicon, which is synthesized by the Siemens method followed by being subjected to thermal treatment and includes crystal grains having a Miller index plane or as a principal plane and grown by the thermal treatment, and in which the X-...

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Bibliographische Detailangaben
Hauptverfasser: Miyao, Shuichi, Netsu, Shigeyoshi
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
COMPOUNDS THEREOF
CRYSTAL GROWTH
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:When FZ single crystal silicon is produced from polycrystalline silicon, which is synthesized by the Siemens method followed by being subjected to thermal treatment and includes crystal grains having a Miller index plane or as a principal plane and grown by the thermal treatment, and in which the X-ray diffraction intensity from either of the Miller index planes and after the thermal treatment is 1.5 times or less the X-ray diffraction intensity before the thermal treatment, as raw material, disappearance of crystal lines in the step of forming an FZ single crystal is markedly prevented.