SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAME

Disclosed are a semiconductor element capable of adjusting a barrier height Æ Bn and performing zero-bias operation and impedance matching with an antenna for improving detection sensitivity of high-frequency RF electric signals, a method of manufacturing the same, and a semiconductor device having...

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Hauptverfasser: SHIMIZU, Makoto, KOTAKA, Isamu, ITOH, Hiroki, ISHIBASHI, Tadao
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
ANTENNAS, i.e. RADIO AERIALS
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator SHIMIZU, Makoto
KOTAKA, Isamu
ITOH, Hiroki
ISHIBASHI, Tadao
description Disclosed are a semiconductor element capable of adjusting a barrier height Æ Bn and performing zero-bias operation and impedance matching with an antenna for improving detection sensitivity of high-frequency RF electric signals, a method of manufacturing the same, and a semiconductor device having the same. In the semiconductor element, a concentration of InGaAs (n-type InGaAs layer 2) is intentionally set to be high over a range for preventing the "change of the barrier height caused by the bias" described above up to a deep degeneration range. An electron Fermi level (E F ) increases from a band edge of InGaAs (n-type InGaAs layer 2) to a band edge of InP (InP depletion layer 3).
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subjects ANTENNAS, i.e. RADIO AERIALS
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAME
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